AGM056N10H - описание и поиск аналогов

 

Аналоги AGM056N10H. Основные параметры


   Наименование производителя: AGM056N10H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 1290 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AGM056N10H

   - подбор ⓘ MOSFET транзистора по параметрам

 

AGM056N10H даташит

 ..1. Size:1590K  cn agmsemi
 agm056n10h.pdf pdf_icon

AGM056N10H

AGM056N10H General Description The AGM056N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.1m 140A Advance high cell density Trench technology TO-263 Pin Configuration Low R to

 5.1. Size:1787K  cn agmsemi
 agm056n10c.pdf pdf_icon

AGM056N10H

AGM056N10C General Description Product Summary The AGM056N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 5.4m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

 5.2. Size:1500K  cn agmsemi
 agm056n10a.pdf pdf_icon

AGM056N10H

AGM056N10A General Description The AGM056N10A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 100V 4.7m 100A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to

 7.1. Size:786K  cn agmsemi
 agm056n08c.pdf pdf_icon

AGM056N10H

AGM056N08C General Description Product Summary The AGM056N08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 4.4m 120A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AGM1099E , AGM1099EY , AGM1099S , AGM10N15D , AGM042N10D , AGM056N08C , AGM056N10A , AGM056N10C , IRF9540N , AGM065N10C , AGM065N10D , AGM085N10C , AGM085N10C1 , AGM085N10F , AGM08T15C , AGM1010A2 , AGM1010A-E .

 

 
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