AGM056N10H MOSFET Datasheet: N-Ch, 100V, 140A. Full specification with pinout and replacement list

AGM056N10H Specs and Replacement

   Type Designator: AGM056N10H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: TO263

AGM056N10H substitution

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AGM056N10H datasheet

..1. Size:1590K cn agmsemi
agm056n10h.pdf pdf_icon

AGM056N10H General Description The AGM056N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. Features 100V 5.1m 140A Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

5.1. Size:1787K cn agmsemi
agm056n10c.pdf pdf_icon

AGM056N10C General Description Product Summary The AGM056N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 5.4m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to... See More ⇒

5.2. Size:1500K cn agmsemi
agm056n10a.pdf pdf_icon

AGM056N10A General Description The AGM056N10A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 100V 4.7m 100A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to ... See More ⇒

7.1. Size:786K cn agmsemi
agm056n08c.pdf pdf_icon

AGM056N08C General Description Product Summary The AGM056N08C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 85V 4.4m 120A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to ... See More ⇒

Detailed specifications: AGM1099E , AGM1099EY , AGM1099S , AGM10N15D , AGM042N10D , AGM056N08C , AGM056N10A , AGM056N10C , IRF9540N , AGM065N10C , AGM065N10D , AGM085N10C , AGM085N10C1 , AGM085N10F , AGM08T15C , AGM1010A2 , AGM1010A-E .