AGM16N10D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM16N10D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 227 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO252

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AGM16N10D datasheet

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AGM16N10D

AGM16N10D General Description Product Summary The AGM16N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 16m 40A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

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 agm16n10c.pdf pdf_icon

AGM16N10D

AGM16N10C General Description Product Summary The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 15m 55A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimi

 8.1. Size:439K  cn agmsemi
 agm16n65f.pdf pdf_icon

AGM16N10D

AGM16N65F General Description Product Summary The AGM16N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.58 16A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m

Otros transistores... AGM15T13A, AGM15T13C, AGM15T13D, AGM15T13F, AGM15T13H, AGM15T16C, AGM15T16D, AGM16N10C, IRF530, AGM302C1, AGM302D1, AGM303A, AGM303AP, AGM303D, AGM303D1, AGM303MNA, AGM3045A