All MOSFET. AGM16N10D Datasheet

 

AGM16N10D Datasheet and Replacement


   Type Designator: AGM16N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
 

 AGM16N10D substitution

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AGM16N10D Datasheet (PDF)

 ..1. Size:1182K  cn agmsemi
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AGM16N10D

AGM16N10D General DescriptionProduct SummaryThe AGM16N10D combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 100V 16m 40AAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimi

 6.1. Size:1154K  cn agmsemi
 agm16n10c.pdf pdf_icon

AGM16N10D

AGM16N10C General DescriptionProduct SummaryThe AGM16N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 100V 15m 55AAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimi

 8.1. Size:439K  cn agmsemi
 agm16n65f.pdf pdf_icon

AGM16N10D

AGM16N65F General DescriptionProduct SummaryThe AGM16N65F combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.650V 0.5816A FeaturesAdvance high cell density Trench technologyTO-220F Pin ConfigurationLow R to m

Datasheet: AGM15T13A , AGM15T13C , AGM15T13D , AGM15T13F , AGM15T13H , AGM15T16C , AGM15T16D , AGM16N10C , 8N60 , , , , , , , , .

Keywords - AGM16N10D MOSFET datasheet

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