AGM16N10D Datasheet. Specs and Replacement

Type Designator: AGM16N10D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

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AGM16N10D datasheet

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AGM16N10D

AGM16N10D General Description Product Summary The AGM16N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 16m 40A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi... See More ⇒

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AGM16N10D

AGM16N10C General Description Product Summary The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 15m 55A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimi... See More ⇒

 8.1. Size:439K  cn agmsemi
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AGM16N10D

AGM16N65F General Description Product Summary The AGM16N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.58 16A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m... See More ⇒

Detailed specifications: AGM15T13A, AGM15T13C, AGM15T13D, AGM15T13F, AGM15T13H, AGM15T16C, AGM15T16D, AGM16N10C, IRF530, AGM302C1, AGM302D1, AGM303A, AGM303AP, AGM303D, AGM303D1, AGM303MNA, AGM3045A

Keywords - AGM16N10D MOSFET specs

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