AGM16N10D - аналоги, параметры транзистора - Справочник транзисторов

AGM16N10D даташит

..1. Size:1182K cn agmsemi
agm16n10d.pdf pdf_icon

AGM16N10D General Description Product Summary The AGM16N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 16m 40A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

6.1. Size:1154K cn agmsemi
agm16n10c.pdf pdf_icon

AGM16N10C General Description Product Summary The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 15m 55A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimi

8.1. Size:439K cn agmsemi
agm16n65f.pdf pdf_icon

AGM16N65F General Description Product Summary The AGM16N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.58 16A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m

Другие MOSFET... AGM15T13A , AGM15T13C , AGM15T13D , AGM15T13F , AGM15T13H , AGM15T16C , AGM15T16D , AGM16N10C , IRFZ24N , AGM302C1 , AGM302D1 , AGM303A , AGM303AP , AGM303D , AGM303D1 , AGM303MNA , AGM3045A .