AGM303A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM303A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.7 nS
Cossⓘ - Capacitancia de salida: 380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
Encapsulados: PDFN5X6
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AGM303A datasheet
agm303a.pdf
AGM303A V =10V GS V =4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.72 AGM303A Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.agm-mos.com
agm303ap.pdf
AGM303AP Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. V Gate -Source Voltage Vs.Tj GS(TH) VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typica
agm303d1.pdf
AGM303D1 General Description Product Summary The AGM303D1 combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R .This device is ideal DS(ON) for load BVDSS RDSON ID protection applications. switch and battery 30V 2.0m 100A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize
agm303mna.pdf
AGM303MNA V =10V GS V =4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.5 AGM303MNA Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.agm-mos.c
Otros transistores... AGM15T13F, AGM15T13H, AGM15T16C, AGM15T16D, AGM16N10C, AGM16N10D, AGM302C1, AGM302D1, MMIS60R580P, AGM303AP, AGM303D, AGM303D1, AGM303MNA, AGM3045A, AGM304A, AGM304A-B, AGM304AP
Parámetros del MOSFET. Cómo se afectan entre sí.
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