AGM303A Datasheet. Specs and Replacement
Type Designator: AGM303A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: PDFN5X6
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AGM303A substitution
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AGM303A datasheet
agm303a.pdf
AGM303A V =10V GS V =4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.72 AGM303A Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.agm-mos.com ... See More ⇒
agm303ap.pdf
AGM303AP Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. V Gate -Source Voltage Vs.Tj GS(TH) VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typica... See More ⇒
agm303d1.pdf
AGM303D1 General Description Product Summary The AGM303D1 combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R .This device is ideal DS(ON) for load BVDSS RDSON ID protection applications. switch and battery 30V 2.0m 100A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize... See More ⇒
agm303mna.pdf
AGM303MNA V =10V GS V =4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.5 AGM303MNA Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.agm-mos.c... See More ⇒
Detailed specifications: AGM15T13F, AGM15T13H, AGM15T16C, AGM15T16D, AGM16N10C, AGM16N10D, AGM302C1, AGM302D1, MMIS60R580P, AGM303AP, AGM303D, AGM303D1, AGM303MNA, AGM3045A, AGM304A, AGM304A-B, AGM304AP
Keywords - AGM303A MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: AO6804 | AGM085N10C1 | VBE1303 | 2SJ477-01MR | SMF12N60 | KNB2404A | DHD3N90
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