AGM306MBQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM306MBQTable 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM306MBPTable 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM306MNQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D30 -- -- VZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

AGM306MNA General DescriptionProduct SummaryThe AGM306MNA combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R . This device is idealDS(ON)BVDSS RDSON IDswitch and battery protection applications.for load Features30V 6.8m 40AAdvance high cell density Trench technologyQFN5*6 Pin Configuration Low R to minim

AGM306MAFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2501V =10V GS0.8V =4.5V GS250.60.40.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.52021.51010.500-50 50 1500 10 20 30Junction Tempe