AGM306MBQ Specs and Replacement

Type Designator: AGM306MBQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: WQFN3X3

AGM306MBQ substitution

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AGM306MBQ datasheet

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AGM306MBQ

AGM306MBQ Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ... See More ⇒

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AGM306MBQ

AGM306MBP Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ... See More ⇒

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AGM306MBQ

AGM306MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 30 -- -- V Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V... See More ⇒

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AGM306MBQ

AGM306MNA General Description Product Summary The AGM306MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON) BVDSS RDSON ID switch and battery protection applications. for load Features 30V 6.8m 40A Advance high cell density Trench technology QFN5*6 Pin Configuration Low R to minim... See More ⇒

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Detailed specifications: AGM305D, AGM305MA, AGM306A, AGM306AP, AGM306C, AGM306D, AGM306MA, AGM306MBP, AON7408, AGM306MNA, AGM306MNQ, AGM307MBP, AGM307MNQ, AGM312M1, AGM312M2, AGM312MAP, AGM312ME

Keywords - AGM306MBQ MOSFET specs

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