AGMH12N10D Todos los transistores

 

AGMH12N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGMH12N10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de AGMH12N10D MOSFET

   - Selección ⓘ de transistores por parámetros

 

AGMH12N10D Datasheet (PDF)

 ..1. Size:1655K  cn agmsemi
 agmh12n10d.pdf pdf_icon

AGMH12N10D

AGMH12N10DCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10DAGMH12N10DGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

 5.1. Size:1642K  cn agmsemi
 agmh12n10c.pdf pdf_icon

AGMH12N10D

AGMH12N10C General DescriptionProduct SummaryThe AGMH12N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 9.6m 55A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to m

 5.2. Size:1651K  cn agmsemi
 agmh12n10i.pdf pdf_icon

AGMH12N10D

AGMH12N10ICharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10IGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

 8.1. Size:2008K  cn agmsemi
 agmh12h05h.pdf pdf_icon

AGMH12N10D

AGMH12H05H General DescriptionProduct SummaryThe AGMH12H05H combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 4.5m 125A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to

MOSTRAR MÁS

Otros transistores... AGMH035N10A , AGMH035N10C , AGMH035N10H , AGMH03N85C , AGMH056N08A , AGMH056N08C , AGMH056N08HM1 , AGMH065N10A , 10N65 , AGMH12N10I , AGMH1405C , AGMH18N20C , AGMH20P15D , AGMH402C , , , .

History: AGMH20P15D | AGMH12N10I | AGMH402C | AGMH065N10A | AGMH18N20C

 

 
Back to Top

 


 
.