AGMH12N10D PDF and Equivalents Search

 

AGMH12N10D Specs and Replacement

Type Designator: AGMH12N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252

AGMH12N10D substitution

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AGMH12N10D datasheet

 ..1. Size:1655K  cn agmsemi
 agmh12n10d.pdf pdf_icon

AGMH12N10D

AGMH12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10D AGMH12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I... See More ⇒

 5.1. Size:1642K  cn agmsemi
 agmh12n10c.pdf pdf_icon

AGMH12N10D

AGMH12N10C General Description Product Summary The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 9.6m 55A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to m... See More ⇒

 5.2. Size:1651K  cn agmsemi
 agmh12n10i.pdf pdf_icon

AGMH12N10D

AGMH12N10I Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10I Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH... See More ⇒

 8.1. Size:2008K  cn agmsemi
 agmh12h05h.pdf pdf_icon

AGMH12N10D

AGMH12H05H General Description Product Summary The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 4.5m 125A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to ... See More ⇒

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Detailed specifications: AGMH035N10A, AGMH035N10C, AGMH035N10H, AGMH03N85C, AGMH056N08A, AGMH056N08C, AGMH056N08HM1, AGMH065N10A, 5N60, AGMH12N10I, AGMH1405C, AGMH18N20C, AGMH20P15D, AGMH402C, AGM3404EL, AGM3407E, AGM3415E

Keywords - AGMH12N10D MOSFET specs

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