All MOSFET. AGMH12N10D Datasheet

 

AGMH12N10D Datasheet and Replacement


   Type Designator: AGMH12N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

 AGMH12N10D substitution

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AGMH12N10D Datasheet (PDF)

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AGMH12N10D

AGMH12N10DCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10DAGMH12N10DGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

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 agmh12n10c.pdf pdf_icon

AGMH12N10D

AGMH12N10C General DescriptionProduct SummaryThe AGMH12N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 9.6m 55A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to m

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 agmh12n10i.pdf pdf_icon

AGMH12N10D

AGMH12N10ICharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10IGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

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 agmh12h05h.pdf pdf_icon

AGMH12N10D

AGMH12H05H General DescriptionProduct SummaryThe AGMH12H05H combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 4.5m 125A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to

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Datasheet: AGMH035N10A , AGMH035N10C , AGMH035N10H , AGMH03N85C , AGMH056N08A , AGMH056N08C , AGMH056N08HM1 , AGMH065N10A , 10N65 , AGMH12N10I , AGMH1405C , AGMH18N20C , AGMH20P15D , AGMH402C , , , .

History: AGMH12N10I | AGMH18N20C | AGMH402C | AGMH20P15D | AGMH065N10A

Keywords - AGMH12N10D MOSFET datasheet

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