AGMH12N10D - аналоги, параметры транзистора - Справочник транзисторов

AGMH12N10D даташит

..1. Size:1655K cn agmsemi
agmh12n10d.pdf pdf_icon

AGMH12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10D AGMH12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

5.1. Size:1642K cn agmsemi
agmh12n10c.pdf pdf_icon

AGMH12N10C General Description Product Summary The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 9.6m 55A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to m

5.2. Size:1651K cn agmsemi
agmh12n10i.pdf pdf_icon

AGMH12N10I Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10I Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

8.1. Size:2008K cn agmsemi
agmh12h05h.pdf pdf_icon

AGMH12H05H General Description Product Summary The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 4.5m 125A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

Другие MOSFET... AGMH035N10A , AGMH035N10C , AGMH035N10H , AGMH03N85C , AGMH056N08A , AGMH056N08C , AGMH056N08HM1 , AGMH065N10A , 5N60 , AGMH12N10I , AGMH1405C , AGMH18N20C , AGMH20P15D , AGMH402C , AGM3404EL , AGM3407E , AGM3415E .