DMN62D1SFB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN62D1SFB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.41 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: X1DFN10063

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DMN62D1SFB datasheet

 ..1. Size:259K  diodes
 dmn62d1sfb.pdf pdf_icon

DMN62D1SFB

DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Footprint of just 0.6mm2 thirteen times smaller than SOT23 V(BR)DSS RDS(on) Max @ TA = +25 C Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 60V Fast Switching Speed 1.6 @ VGS= 4.5V 0.38A Ultra-Small Surface Mount Package ESD P

 7.1. Size:356K  diodes
 dmn62d1lfd.pdf pdf_icon

DMN62D1SFB

DMN62D1LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25 C 2 @ VGS = 4V 400mA Fast Switching Speed 60V 2.5 @ VGS = 2.5V 350mA Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applicat

 8.1. Size:270K  diodes
 dmn62d0lfb.pdf pdf_icon

DMN62D1SFB

DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual

 8.2. Size:323K  diodes
 dmn62d0lfd.pdf pdf_icon

DMN62D1SFB

DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) TA = +25 C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge

MOSTRAR MÁS

Otros transistores... DMN601K, DMN601TK, DMN601VK, DMN601WK, DMN6066SSD, DMN6066SSS, DMN6068LK3, DMN6068SE, IRF1010E, DMN66D0LDW, DMN66D0LT, DMN66D0LW, ZXM64N035L3, ZXMN4A06G, ZXMN4A06K, ZXMN6A07F, ZXMN6A07Z