DMN62D1SFB Datasheet and Replacement

DMN62D1SFB60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Footprint of just 0.6mm2 thirteen times smaller than SOT23 V(BR)DSS RDS(on) Max @ TA = +25C Low On-Resistance1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 60V Fast Switching Speed 1.6 @ VGS= 4.5V 0.38A Ultra-Small Surface Mount Package ESD P

DMN62D1LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 2 @ VGS = 4V 400mA Fast Switching Speed 60V 2.5 @ VGS = 2.5V 350mA Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applicat

DMN62D0LFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual

DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge

DMN62D0U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 4.5V 380mA 60V Fast Switching Speed 340mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Desc

DMN62D0SFDN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed ESD Protected Gate to 2kV 2 @ VGS = 10V 540mA Lead Free/RoHS Compliant (Note 1) 60V Green Device (Note 2) Qualified to AEC-Q101 Standard