DMN62D1SFB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMN62D1SFB
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.47 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.3 V
Максимально допустимый постоянный ток стока |Id|: 0.41 A
Общий заряд затвора (Qg): 1.39 nC
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm
Тип корпуса: X1DFN10063
Аналог (замена) для DMN62D1SFB
DMN62D1SFB Datasheet (PDF)
dmn62d1sfb.pdf
DMN62D1SFB60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Footprint of just 0.6mm2 thirteen times smaller than SOT23 V(BR)DSS RDS(on) Max @ TA = +25C Low On-Resistance1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 60V Fast Switching Speed 1.6 @ VGS= 4.5V 0.38A Ultra-Small Surface Mount Package ESD P
dmn62d1lfd.pdf
DMN62D1LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 2 @ VGS = 4V 400mA Fast Switching Speed 60V 2.5 @ VGS = 2.5V 350mA Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applicat
dmn62d0lfb.pdf
DMN62D0LFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual
dmn62d0lfd.pdf
DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge
dmn62d0u.pdf
DMN62D0U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 4.5V 380mA 60V Fast Switching Speed 340mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Desc
dmn62d0sfd.pdf
DMN62D0SFDN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed ESD Protected Gate to 2kV 2 @ VGS = 10V 540mA Lead Free/RoHS Compliant (Note 1) 60V Green Device (Note 2) Qualified to AEC-Q101 Standard
Другие MOSFET... DMN601K , DMN601TK , DMN601VK , DMN601WK , DMN6066SSD , DMN6066SSS , DMN6068LK3 , DMN6068SE , MMIS60R580P , DMN66D0LDW , DMN66D0LT , DMN66D0LW , ZXM64N035L3 , ZXMN4A06G , ZXMN4A06K , ZXMN6A07F , ZXMN6A07Z .
