AGM609MNA Todos los transistores

 

AGM609MNA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM609MNA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 424 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PDFN5X6

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AGM609MNA datasheet

 ..1. Size:1256K  cn agmsemi
 agm609mna.pdf pdf_icon

AGM609MNA

AGM609MNA 100 14 VDS=5V 10V 8V 12 80 6V 10 VGS=4V 60 8 6 40 4 20 Tj=125 2 VGS=3V Tj=25 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS (V) VGS (V) Fig1. Typical Output Characteristics Fig2. Typical Transfer Characteristics 18 10 15 VGs=10V 12 9 VGs=4.5V 1 6 3 Tj=25 Tj=125 0 0.1 0 25 50 75 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6 Tj-Iunction Temperature ( ) VSD

 8.1. Size:1728K  cn agmsemi
 agm609c.pdf pdf_icon

AGM609MNA

AGM609C General Description Product Summary The AGM609C combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 6.3m 80A Features TO-220 Pin Configuration Advance high cell density Trench technology Low R to minimize

 8.2. Size:1473K  cn agmsemi
 agm609f.pdf pdf_icon

AGM609MNA

AGM609F General Description Product Summary The AGM609F combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 6.3m 80A Features TO-220F Pin Configuration Advance high cell density Trench technology Low R to minimize

 8.3. Size:906K  cn agmsemi
 agm609s.pdf pdf_icon

AGM609MNA

AGM609S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =

MOSTRAR MÁS

Otros transistores... AGM40P25AP , AGM40P26AP , AGM40P26E , AGM40P26S , AGM609AP , AGM609C , AGM609D , AGM609F , IRFB7545 , AGM609S , AGM60P06S , AGM60P100A , AGM60P14A , AGM60P14AP , AGM60P14D , AGM60P20AP , AGM60P20D .

History: VB7638

 

 

 

 

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