AGM609MNA PDF and Equivalents Search

 

AGM609MNA Specs and Replacement

Type Designator: AGM609MNA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 424 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN5X6

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AGM609MNA datasheet

 ..1. Size:1256K  cn agmsemi
 agm609mna.pdf pdf_icon

AGM609MNA

AGM609MNA 100 14 VDS=5V 10V 8V 12 80 6V 10 VGS=4V 60 8 6 40 4 20 Tj=125 2 VGS=3V Tj=25 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS (V) VGS (V) Fig1. Typical Output Characteristics Fig2. Typical Transfer Characteristics 18 10 15 VGs=10V 12 9 VGs=4.5V 1 6 3 Tj=25 Tj=125 0 0.1 0 25 50 75 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6 Tj-Iunction Temperature ( ) VSD... See More ⇒

 8.1. Size:1728K  cn agmsemi
 agm609c.pdf pdf_icon

AGM609MNA

AGM609C General Description Product Summary The AGM609C combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 6.3m 80A Features TO-220 Pin Configuration Advance high cell density Trench technology Low R to minimize ... See More ⇒

 8.2. Size:1473K  cn agmsemi
 agm609f.pdf pdf_icon

AGM609MNA

AGM609F General Description Product Summary The AGM609F combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 6.3m 80A Features TO-220F Pin Configuration Advance high cell density Trench technology Low R to minimize... See More ⇒

 8.3. Size:906K  cn agmsemi
 agm609s.pdf pdf_icon

AGM609MNA

AGM609S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =... See More ⇒

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Detailed specifications: AGM40P25AP, AGM40P26AP, AGM40P26E, AGM40P26S, AGM609AP, AGM609C, AGM609D, AGM609F, IRFB7545, AGM609S, AGM60P06S, AGM60P100A, AGM60P14A, AGM60P14AP, AGM60P14D, AGM60P20AP, AGM60P20D

Keywords - AGM609MNA MOSFET specs

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