AGM609MNA - аналоги, параметры транзистора - Справочник транзисторов

AGM609MNA даташит

..1. Size:1256K cn agmsemi
agm609mna.pdf pdf_icon

AGM609MNA 100 14 VDS=5V 10V 8V 12 80 6V 10 VGS=4V 60 8 6 40 4 20 Tj=125 2 VGS=3V Tj=25 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS (V) VGS (V) Fig1. Typical Output Characteristics Fig2. Typical Transfer Characteristics 18 10 15 VGs=10V 12 9 VGs=4.5V 1 6 3 Tj=25 Tj=125 0 0.1 0 25 50 75 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6 Tj-Iunction Temperature ( ) VSD

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agm609c.pdf pdf_icon

AGM609C General Description Product Summary The AGM609C combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 6.3m 80A Features TO-220 Pin Configuration Advance high cell density Trench technology Low R to minimize

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agm609f.pdf pdf_icon

AGM609F General Description Product Summary The AGM609F combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 6.3m 80A Features TO-220F Pin Configuration Advance high cell density Trench technology Low R to minimize

8.3. Size:906K cn agmsemi
agm609s.pdf pdf_icon

AGM609S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =