AGM40P35AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM40P35AP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: PDFN3.3X3.3

 Búsqueda de reemplazo de AGM40P35AP MOSFET

- Selecciónⓘ de transistores por parámetros

 

AGM40P35AP datasheet

 ..1. Size:963K  cn agmsemi
 agm40p35ap.pdf pdf_icon

AGM40P35AP

AGM40P35AP General Description Product Summary The AGM40P35AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -35A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini

 5.1. Size:527K  cn agmsemi
 agm40p35a.pdf pdf_icon

AGM40P35AP

AGM40P35A General Description Product Summary The AGM40P35A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 11m -60A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 5.2. Size:799K  cn agmsemi
 agm40p35a-ku.pdf pdf_icon

AGM40P35AP

AGM40P35A-KU General Description The AGM40P35A-KU combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal for load switch and battery protection BVDSS RDSON ID applications. -40V 15m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to min

 6.1. Size:1002K  cn agmsemi
 agm40p35d.pdf pdf_icon

AGM40P35AP

AGM40P35D General Description Product Summary The AGM40P35D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -60A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co

MOSTRAR MÁS

Otros transistores... AGM60P20AP, AGM60P20D, AGM60P20R, AGM40P30A, AGM40P30AP, AGM40P30D, AGM40P35A, AGM40P35A-KU, IRF840, AGM40P35D, AGM40P55A, AGM40P55AP, AGM40P55D, AGM40P65AP, AGM40P65E, AGM40P75A, AGM40P75D