AGM40P35AP Specs and Replacement

Type Designator: AGM40P35AP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: PDFN3.3X3.3

AGM40P35AP substitution

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AGM40P35AP datasheet

 ..1. Size:963K  cn agmsemi
 agm40p35ap.pdf pdf_icon

AGM40P35AP

AGM40P35AP General Description Product Summary The AGM40P35AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -35A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini... See More ⇒

 5.1. Size:527K  cn agmsemi
 agm40p35a.pdf pdf_icon

AGM40P35AP

AGM40P35A General Description Product Summary The AGM40P35A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 11m -60A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to minimize ... See More ⇒

 5.2. Size:799K  cn agmsemi
 agm40p35a-ku.pdf pdf_icon

AGM40P35AP

AGM40P35A-KU General Description The AGM40P35A-KU combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal for load switch and battery protection BVDSS RDSON ID applications. -40V 15m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to min... See More ⇒

 6.1. Size:1002K  cn agmsemi
 agm40p35d.pdf pdf_icon

AGM40P35AP

AGM40P35D General Description Product Summary The AGM40P35D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -60A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co... See More ⇒

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Detailed specifications: AGM60P20AP, AGM60P20D, AGM60P20R, AGM40P30A, AGM40P30AP, AGM40P30D, AGM40P35A, AGM40P35A-KU, IRF840, AGM40P35D, AGM40P55A, AGM40P55AP, AGM40P55D, AGM40P65AP, AGM40P65E, AGM40P75A, AGM40P75D

Keywords - AGM40P35AP MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.