AGM40P35AP. Аналоги и основные параметры

Наименование производителя: AGM40P35AP

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 18 ns

Cossⓘ - Выходная емкость: 360 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm

Тип корпуса: PDFN3.3X3.3

Аналог (замена) для AGM40P35AP

- подборⓘ MOSFET транзистора по параметрам

 

AGM40P35AP даташит

 ..1. Size:963K  cn agmsemi
 agm40p35ap.pdf pdf_icon

AGM40P35AP

AGM40P35AP General Description Product Summary The AGM40P35AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -35A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini

 5.1. Size:527K  cn agmsemi
 agm40p35a.pdf pdf_icon

AGM40P35AP

AGM40P35A General Description Product Summary The AGM40P35A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 11m -60A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 5.2. Size:799K  cn agmsemi
 agm40p35a-ku.pdf pdf_icon

AGM40P35AP

AGM40P35A-KU General Description The AGM40P35A-KU combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal for load switch and battery protection BVDSS RDSON ID applications. -40V 15m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to min

 6.1. Size:1002K  cn agmsemi
 agm40p35d.pdf pdf_icon

AGM40P35AP

AGM40P35D General Description Product Summary The AGM40P35D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -60A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co

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