AP18P30Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP18P30Q 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38.5 nS
Cossⓘ - Capacitancia de salida: 349 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Encapsulados: PDFN3X3
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AP18P30Q datasheet
9.1. Size:200K ape
ap18p10agh.pdf 
AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching
9.2. Size:174K ape
ap18p10gh.pdf
AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r
9.3. Size:65K ape
ap18p10aghj-hf.pdf
AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching
9.4. Size:169K ape
ap18p10gm.pdf
AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP18P10 series are
9.5. Size:165K ape
ap18p10agj.pdf
AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching
9.6. Size:172K ape
ap18p10gk.pdf
AP18P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D Simple Drive Requirement RDS(ON) 160m S Fast Switching Characteristic ID -3.1A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP18P10 series are from Advanced Power innovated design and silicon process technology to
9.7. Size:135K ape
ap18p10gs.pdf
AP18P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G D re
9.8. Size:153K ape
ap18p10gi.pdf
AP18P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12A G D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.9. Size:91K ape
ap18p10gk-hf.pdf
AP18P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D Simple Drive Requirement RDS(ON) 160m S Fast Switching Characteristic ID -3.1A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP18P10 series are from Advanced Power innovated design and silicon process technology to
9.10. Size:102K ape
ap18p10gh-hf ap18p10gj-hf.pdf
AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G
9.11. Size:94K ape
ap18p10gm-hf.pdf
AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination
9.12. Size:170K ape
ap18p10gj.pdf
AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge
9.13. Size:1192K cn apm
ap18p20p.pdf
AP18P20P -200V P-Channel Enhancement Mode MOSFET Description The AP18P20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen
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