AP18P30Q Datasheet and Replacement
Type Designator: AP18P30Q
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 20
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 38.5
nS
Cossⓘ -
Output Capacitance: 349
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package: PDFN3X3
-
MOSFET ⓘ Cross-Reference Search
AP18P30Q Datasheet (PDF)
9.1. Size:200K ape
ap18p10agh.pdf 
AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
9.2. Size:174K ape
ap18p10gh.pdf
AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r
9.3. Size:65K ape
ap18p10aghj-hf.pdf
AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
9.4. Size:169K ape
ap18p10gm.pdf
AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are
9.5. Size:165K ape
ap18p10agj.pdf
AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
9.6. Size:172K ape
ap18p10gk.pdf
AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design andsilicon process technology to
9.7. Size:135K ape
ap18p10gs.pdf
AP18P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GDre
9.8. Size:153K ape
ap18p10gi.pdf
AP18P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGDTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized devicedesi
9.9. Size:91K ape
ap18p10gk-hf.pdf
AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design and siliconprocess technology to
9.10. Size:102K ape
ap18p10gh-hf ap18p10gj-hf.pdf
AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G
9.11. Size:94K ape
ap18p10gm-hf.pdf
AP18P10GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
9.12. Size:170K ape
ap18p10gj.pdf
AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge
9.13. Size:1192K cn apm
ap18p20p.pdf
AP18P20P -200V P-Channel Enhancement Mode MOSFET Description The AP18P20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen
Datasheet: AP1310
, AP1310K
, AP150N03G
, AP150N03Q
, AP15N10K
, AP1605
, AP1606
, AP180N03G
, IRF520
, , , , , , , , .
History: AP1605
| AP15N10K
| AP150N03Q
| AP150N03G
| AP1606
| AP180N03G
Keywords - AP18P30Q MOSFET datasheet
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