AP18P30Q - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP18P30Q
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 30
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 38.5
ns
Cossⓘ - Выходная емкость: 349
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014
Ohm
Тип корпуса: PDFN3X3
Аналог (замена) для AP18P30Q
-
подбор ⓘ MOSFET транзистора по параметрам
AP18P30Q Datasheet (PDF)
9.1. Size:200K ape
ap18p10agh.pdf 
AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
9.2. Size:174K ape
ap18p10gh.pdf 
AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r
9.3. Size:65K ape
ap18p10aghj-hf.pdf 
AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
9.4. Size:169K ape
ap18p10gm.pdf 
AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are
9.5. Size:165K ape
ap18p10agj.pdf 
AP18P10AGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching
9.6. Size:172K ape
ap18p10gk.pdf 
AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design andsilicon process technology to
9.7. Size:135K ape
ap18p10gs.pdf 
AP18P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GDre
9.8. Size:153K ape
ap18p10gi.pdf 
AP18P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGDTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized devicedesi
9.9. Size:91K ape
ap18p10gk-hf.pdf 
AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design and siliconprocess technology to
9.10. Size:102K ape
ap18p10gh-hf ap18p10gj-hf.pdf 
AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G
9.11. Size:94K ape
ap18p10gm-hf.pdf 
AP18P10GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
9.12. Size:170K ape
ap18p10gj.pdf 
AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge
9.13. Size:1192K cn apm
ap18p20p.pdf 
AP18P20P -200V P-Channel Enhancement Mode MOSFET Description The AP18P20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen
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