ZXMN6A08K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMN6A08K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.9 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 3.8 nC
   Cossⓘ - Capacitancia de salida: 459 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO252 DPAK

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ZXMN6A08K Datasheet (PDF)

..1. Size:660K diodes
zxmn6a08k.pdf

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

0.1. Size:657K diodes
zxmn6a08ktc.pdf

6.1. Size:446K diodes
zxmn6a08g.pdf

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi

6.2. Size:652K diodes
zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf

A Product Line ofDiodes IncorporatedZXMN6A08E660V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 80m @ VGS=10V 3.5A Low threshold100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S

6.3. Size:568K diodes
zxmn6a08e6.pdf

ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

6.4. Size:458K diodes
zxmn6a08e6q.pdf

ZXMN6A08E6Q 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

6.5. Size:444K zetex
zxmn6a08gta.pdf

Otros transistores... DMN66D0LW , ZXM64N035L3 , ZXMN4A06G , ZXMN4A06K , ZXMN6A07F , ZXMN6A07Z , ZXMN6A08E6 , ZXMN6A08G , IRFP250 , ZXMN6A09DN8 , ZXMN6A09G , ZXMN6A09K , ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z , ZXMN6A25DN8 , ZXMN6A25G .

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