All MOSFET. ZXMN6A08K Datasheet

 

ZXMN6A08K Datasheet and Replacement


   Type Designator: ZXMN6A08K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Qg ⓘ - Total Gate Charge: 3.8 nC
   Cossⓘ - Output Capacitance: 459 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252 DPAK
 

 ZXMN6A08K substitution

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ZXMN6A08K Datasheet (PDF)

 ..1. Size:660K  diodes
 zxmn6a08k.pdf pdf_icon

ZXMN6A08K

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

 0.1. Size:657K  diodes
 zxmn6a08ktc.pdf pdf_icon

ZXMN6A08K

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

 6.1. Size:446K  diodes
 zxmn6a08g.pdf pdf_icon

ZXMN6A08K

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi

 6.2. Size:652K  diodes
 zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf pdf_icon

ZXMN6A08K

A Product Line ofDiodes IncorporatedZXMN6A08E660V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 80m @ VGS=10V 3.5A Low threshold100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S

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History: AON3611

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