ZXMN6A08K Datasheet. Specs and Replacement

Type Designator: ZXMN6A08K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.9 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 459 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252 DPAK

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ZXMN6A08K datasheet

 ..1. Size:660K  diodes
zxmn6a08k.pdf pdf_icon

ZXMN6A08K

A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech... See More ⇒

 0.1. Size:657K  diodes
zxmn6a08ktc.pdf pdf_icon

ZXMN6A08K

A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech... See More ⇒

 6.1. Size:446K  diodes
zxmn6a08g.pdf pdf_icon

ZXMN6A08K

ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.080 @ VGS = 10V 5.3 60 0.150 @ VGS = 4.5V 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resi... See More ⇒

 6.2. Size:652K  diodes
zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf pdf_icon

ZXMN6A08K

A Product Line of Diodes Incorporated ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 80m @ VGS=10V 3.5A Low threshold 100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S... See More ⇒

Detailed specifications: DMN66D0LW, ZXM64N035L3, ZXMN4A06G, ZXMN4A06K, ZXMN6A07F, ZXMN6A07Z, ZXMN6A08E6, ZXMN6A08G, CS150N04A8, ZXMN6A09DN8, ZXMN6A09G, ZXMN6A09K, ZXMN6A11DN8, ZXMN6A11G, ZXMN6A11Z, ZXMN6A25DN8, ZXMN6A25G

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