ZXMN6A08K. Аналоги и основные параметры
Наименование производителя: ZXMN6A08K
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.9 A
Электрические характеристики
Cossⓘ - Выходная емкость: 459 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Аналог (замена) для ZXMN6A08K
- подборⓘ MOSFET транзистора по параметрам
ZXMN6A08K даташит
zxmn6a08k.pdf
A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech
zxmn6a08ktc.pdf
A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech
zxmn6a08g.pdf
ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.080 @ VGS = 10V 5.3 60 0.150 @ VGS = 4.5V 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resi
zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf
A Product Line of Diodes Incorporated ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 80m @ VGS=10V 3.5A Low threshold 100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S
Другие MOSFET... DMN66D0LW , ZXM64N035L3 , ZXMN4A06G , ZXMN4A06K , ZXMN6A07F , ZXMN6A07Z , ZXMN6A08E6 , ZXMN6A08G , BS170 , ZXMN6A09DN8 , ZXMN6A09G , ZXMN6A09K , ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z , ZXMN6A25DN8 , ZXMN6A25G .
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Список транзисторов
Обновления
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