AP2318A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2318A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 125 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: SOT23

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AP2318A datasheet

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AP2318A

AP2318A N-Channel Enhancement Mosfet Features 20V,6A R

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AP2318A

AP2318AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mA S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on

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AP2318A

AP2318GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extrem

 8.2. Size:148K  ape
ap2318gen.pdf pdf_icon

AP2318A

AP2318GEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318 series are from Advanced Power innovated design and silicon G process technology to achieve t

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