AP2318A Datasheet. Specs and Replacement
Type Designator: AP2318A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOT23
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AP2318A substitution
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AP2318A datasheet
ap2318a.pdf
AP2318A N-Channel Enhancement Mosfet Features 20V,6A R ... See More ⇒
ap2318agen-hf.pdf
AP2318AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mA S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on... See More ⇒
ap2318gen-hf.pdf
AP2318GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extrem... See More ⇒
ap2318gen.pdf
AP2318GEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318 series are from Advanced Power innovated design and silicon G process technology to achieve t... See More ⇒
Detailed specifications: AP20N100Q, AP20P30S, AP2301B, AP2310, AP2316, AP2317A, AP2317QD, AP2317SD, RU7088R, AP2335, AP25N06K, AP25N06Q, AP25P06K, AP25P06Q, AP25P30Q, AP2714QD, AP2714SD
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