ZXMN6A09K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN6A09K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12.2 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1426 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Búsqueda de reemplazo de ZXMN6A09K MOSFET
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ZXMN6A09K datasheet
zxmn6a09k.pdf
ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V RDS(on)=0.040 ; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistan
zxmn6a09dn8.pdf
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 60 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
zxmn6a09g.pdf
ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 7.5 60 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
Otros transistores... ZXMN4A06K, ZXMN6A07F, ZXMN6A07Z, ZXMN6A08E6, ZXMN6A08G, ZXMN6A08K, ZXMN6A09DN8, ZXMN6A09G, IRF1407, ZXMN6A11DN8, ZXMN6A11G, ZXMN6A11Z, ZXMN6A25DN8, ZXMN6A25G, ZXMN6A25K, ZXMN6A25N8, ZXMN7A11G
History: PNMDP30V60 | NVBG080N120SC1 | ZXMN6A08K
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