ZXMN6A09K PDF and Equivalents Search

 

ZXMN6A09K Specs and Replacement


   Type Designator: ZXMN6A09K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 10.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.2 A

Electrical Characteristics


   Cossⓘ - Output Capacitance: 1426 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO252 DPAK
 

 ZXMN6A09K substitution

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ZXMN6A09K datasheet

 ..1. Size:624K  diodes
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ZXMN6A09K

ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V RDS(on)=0.040 ; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistan... See More ⇒

 0.1. Size:631K  diodes
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ZXMN6A09K

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 6.1. Size:584K  diodes
 zxmn6a09dn8.pdf pdf_icon

ZXMN6A09K

ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 60 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. ... See More ⇒

 6.2. Size:558K  diodes
 zxmn6a09g.pdf pdf_icon

ZXMN6A09K

ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 7.5 60 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.... See More ⇒

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Keywords - ZXMN6A09K MOSFET specs

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