ZXMN6A09K Datasheet. Specs and Replacement
Type Designator: ZXMN6A09K 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 10.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.2 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 1426 pF
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ZXMN6A09K substitution
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ZXMN6A09K datasheet
zxmn6a09k.pdf
ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V RDS(on)=0.040 ; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistan... See More ⇒
zxmn6a09dn8.pdf
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 60 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. ... See More ⇒
zxmn6a09g.pdf
ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 7.5 60 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.... See More ⇒
Detailed specifications: ZXMN4A06K, ZXMN6A07F, ZXMN6A07Z, ZXMN6A08E6, ZXMN6A08G, ZXMN6A08K, ZXMN6A09DN8, ZXMN6A09G, 10N65, ZXMN6A11DN8, ZXMN6A11G, ZXMN6A11Z, ZXMN6A25DN8, ZXMN6A25G, ZXMN6A25K, ZXMN6A25N8, ZXMN7A11G
Keywords - ZXMN6A09K MOSFET specs
ZXMN6A09K cross reference
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ZXMN6A09K replacement
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History: ZXMN6A11Z
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