ZXMN6A09K - аналоги, параметры транзистора - Справочник транзисторов

ZXMN6A09K даташит

..1. Size:624K diodes
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ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V RDS(on)=0.040 ; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistan

0.1. Size:631K diodes
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6.1. Size:584K diodes
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ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 60 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

6.2. Size:558K diodes
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ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 7.5 60 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.