ZXMN6A11DN8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN6A11DN8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SO8

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ZXMN6A11DN8 datasheet

 ..1. Size:649K  diodes
 zxmn6a11dn8.pdf pdf_icon

ZXMN6A11DN8

ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.120 @ VGS= 10V 3.2 60 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D1 D2 Low on-

 6.1. Size:615K  diodes
 zxmn6a11gtc zxmn6a11g zxmn6a11gta.pdf pdf_icon

ZXMN6A11DN8

 6.2. Size:201K  diodes
 zxmn6a11zta.pdf pdf_icon

ZXMN6A11DN8

A Product Line of Diodes Incorporated ZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green

 6.3. Size:538K  diodes
 zxmn6a11g.pdf pdf_icon

ZXMN6A11DN8

A Product Line of Diodes Incorporated Green ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6

MOSTRAR MÁS

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