All MOSFET. ZXMN6A11DN8 Datasheet

 

ZXMN6A11DN8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN6A11DN8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Qgⓘ - Total Gate Charge: 3 nC
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SO8

 ZXMN6A11DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN6A11DN8 Datasheet (PDF)

 ..1. Size:649K  diodes
 zxmn6a11dn8.pdf

ZXMN6A11DN8 ZXMN6A11DN8

ZXMN6A11DN860V SO8 Dual N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.2600.180 @ VGS= 4.5V 2.6DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD1 D2 Low on-

 6.1. Size:615K  diodes
 zxmn6a11gtc zxmn6a11g zxmn6a11gta.pdf

ZXMN6A11DN8 ZXMN6A11DN8

A Product Line ofDiodes IncorporatedZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low gate drive V(BR)DSS RDS(on) TA = 25C Low input capacitance Green component and RoHS compliant (Note 1) 120m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 180m

 6.2. Size:201K  diodes
 zxmn6a11zta.pdf

ZXMN6A11DN8 ZXMN6A11DN8

A Product Line of Diodes IncorporatedZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green

 6.3. Size:538K  diodes
 zxmn6a11g.pdf

ZXMN6A11DN8 ZXMN6A11DN8

A Product Line of Diodes Incorporated GreenZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6

 6.4. Size:581K  diodes
 zxmn6a11z.pdf

ZXMN6A11DN8 ZXMN6A11DN8

ZXMN6A11Z60V SOT89 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.6600.180 @ VGS= 4.5V 2.9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

 6.5. Size:904K  cn vbsemi
 zxmn6a11z.pdf

ZXMN6A11DN8 ZXMN6A11DN8

ZXMN6A11Zwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

 6.6. Size:4010K  cn tech public
 zxmn6a11zta-p.pdf

ZXMN6A11DN8 ZXMN6A11DN8

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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