ZXMN6A11DN8 MOSFET Datasheet: N-Ch, 60V, 3.2A. Full specification with pinout and replacement list

ZXMN6A11DN8 Specs and Replacement

Type Designator: ZXMN6A11DN8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SO8

ZXMN6A11DN8 substitution

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ZXMN6A11DN8 datasheet

..1. Size:649K diodes
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ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.120 @ VGS= 10V 3.2 60 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D1 D2 Low on-... See More ⇒

6.1. Size:615K diodes
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6.2. Size:201K diodes
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A Product Line of Diodes Incorporated ZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green... See More ⇒

6.3. Size:538K diodes
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A Product Line of Diodes Incorporated Green ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6... See More ⇒