ZXMN6A11DN8 - описание и поиск аналогов

ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.120 @ VGS= 10V 3.2 60 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D1 D2 Low on-

A Product Line of Diodes Incorporated ZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green

A Product Line of Diodes Incorporated Green ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID V(BR)DSS RDS(on) Low Gate Drive TA = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 4.4A 120m @ VGS= 10V Halogen and Antimony Free. Green Device (Note 3) 6

ZXMN6A11Z 60V SOT89 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.120 @ VGS= 10V 3.6 60 0.180 @ VGS= 4.5V 2.9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistanc

ZXMN6A11Z www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise