AP70P03K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70P03K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO252

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AP70P03K datasheet

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 ap70p03k.pdf pdf_icon

AP70P03K

 7.1. Size:1663K  cn apm
 ap70p03d.pdf pdf_icon

AP70P03K

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R

 7.2. Size:1611K  cn apm
 ap70p03nf.pdf pdf_icon

AP70P03K

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R

 7.3. Size:1495K  cn apm
 ap70p03df.pdf pdf_icon

AP70P03K

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS D R

MOSTRAR MÁS

Otros transistores... AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800, AP6802, AP6900, AP70N100K, MMIS60R580P, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, AP80N06T, AP80P04K, AP85N04G, AP85N04K