AP70P03K Datasheet. Specs and Replacement

Type Designator: AP70P03K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

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AP70P03K datasheet

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AP70P03K

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AP70P03K

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

 7.2. Size:1611K  cn apm
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AP70P03K

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R ... See More ⇒

 7.3. Size:1495K  cn apm
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AP70P03K

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS D R ... See More ⇒

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Detailed specifications: AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800, AP6802, AP6900, AP70N100K, MMIS60R580P, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, AP80N06T, AP80P04K, AP85N04G, AP85N04K

Keywords - AP70P03K MOSFET specs

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