AP70P03K - Аналоги. Основные параметры
Наименование производителя: AP70P03K
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 430 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO252
Аналог (замена) для AP70P03K
AP70P03K технические параметры
ap70p03d.pdf
AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R
ap70p03nf.pdf
AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R
ap70p03df.pdf
AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS D R
Другие MOSFET... AP6009S , AP60N04Q , AP60P20K , AP6242 , AP6800 , AP6802 , AP6900 , AP70N100K , P60NF06 , AP75N04K , , , , , , , .
Список транзисторов
Обновления
MOSFET: AP75N04K | AP70P03K | AP70N100K | AP6900 | AP6802 | AP6800 | AP6242 | AP60P20K | AP60N04Q | AP6009S | AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q
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