ZXMN7A11G Todos los transistores

 

ZXMN7A11G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN7A11G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 298 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: SOT223
 

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ZXMN7A11G datasheet

 ..1. Size:417K  diodes
 zxmn7a11g.pdf pdf_icon

ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 0.1. Size:415K  zetex
 zxmn7a11gta.pdf pdf_icon

ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 6.1. Size:524K  diodes
 zxmn7a11k.pdf pdf_icon

ZXMN7A11G

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

 6.2. Size:520K  zetex
 zxmn7a11ktc.pdf pdf_icon

ZXMN7A11G

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

MOSTRAR MÁS

Otros transistores... ZXMN6A09K , ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z , ZXMN6A25DN8 , ZXMN6A25G , ZXMN6A25K , ZXMN6A25N8 , 20N50 , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , ZVNL120G .

 

 
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