ZXMN7A11G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN7A11G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 4.35 nC
Cossⓘ - Capacitancia de salida: 298 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: SOT223
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ZXMN7A11G Datasheet (PDF)
zxmn7a11g.pdf
ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast
zxmn7a11gta.pdf
ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast
zxmn7a11k.pdf
ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa
zxmn7a11ktc.pdf
ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa
Otros transistores... ZXMN6A09K , ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z , ZXMN6A25DN8 , ZXMN6A25G , ZXMN6A25K , ZXMN6A25N8 , STP65NF06 , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , ZVNL120G .
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Recientemente añadidas las descripciónes de los transistores:
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