ZXMN7A11G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN7A11G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.8 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 298 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: SOT223

  📄📄 Copiar 

 Búsqueda de reemplazo de ZXMN7A11G MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMN7A11G datasheet

 ..1. Size:417K  diodes
zxmn7a11g.pdf pdf_icon

ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 0.1. Size:415K  zetex
zxmn7a11gta.pdf pdf_icon

ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 6.1. Size:524K  diodes
zxmn7a11k.pdf pdf_icon

ZXMN7A11G

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

 6.2. Size:520K  zetex
zxmn7a11ktc.pdf pdf_icon

ZXMN7A11G

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

Otros transistores... ZXMN6A09K, ZXMN6A11DN8, ZXMN6A11G, ZXMN6A11Z, ZXMN6A25DN8, ZXMN6A25G, ZXMN6A25K, ZXMN6A25N8, IRF1405, ZXMN7A11K, BSS123Z, BSS123W, ZVN4424Z, ZVN4525E6, ZVN4525G, ZVN4525Z, ZVNL120G