ZXMN7A11G datasheet, аналоги, основные параметры

Наименование производителя: ZXMN7A11G  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.9 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 70 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A

Электрические характеристики

Cossⓘ - Выходная емкость: 298 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: SOT223

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Аналог (замена) для ZXMN7A11G

- подборⓘ MOSFET транзистора по параметрам

 

ZXMN7A11G даташит

 ..1. Size:417K  diodes
 zxmn7a11g.pdf pdf_icon

ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 0.1. Size:415K  zetex
 zxmn7a11gta.pdf pdf_icon

ZXMN7A11G

ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast

 6.1. Size:524K  diodes
 zxmn7a11k.pdf pdf_icon

ZXMN7A11G

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

 6.2. Size:520K  zetex
 zxmn7a11ktc.pdf pdf_icon

ZXMN7A11G

ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa

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