ZXMN7A11G MOSFET Datasheet: N-Ch, 70V, 3.8A. Full specification with pinout and replacement list

ZXMN7A11G Specs and Replacement

   Type Designator: ZXMN7A11G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 298 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SOT223

ZXMN7A11G substitution

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ZXMN7A11G datasheet

..1. Size:417K diodes
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ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast ... See More ⇒

0.1. Size:415K zetex
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6.1. Size:524K diodes
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ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V RDS(on)=0.13 ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fa... See More ⇒

6.2. Size:520K zetex
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