ZXMN7A11G MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN7A11G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Qgⓘ - Total Gate Charge: 4.35 nC
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SOT223

ZXMN7A11G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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