AUN062N08BG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AUN062N08BG datasheet

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aua062n08bg aub062n08bg aup062n08bg aun062n08bg aud062n08bg.pdf pdf_icon

AUA 8BG, AU N08BG, AUP062 G, A062N08 UB062N 2N08BG AUN 8BG, AU N08BG N062N08 UD062N MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 6m (typ.) source on-res DS(ON) = 5.6 High speed power switc ching Enhance

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aun065n10.pdf pdf_icon

AUN065N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous Rectification, Power Management, Load Switch 2. Features Proprietary New Trench Technology Fast Recovery Body Diode Low Gate Charge Minimize Switching Loss Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 6.5 DS(on),max m Q 67 nC g,typ I 304 A D,pulse 3. Packa

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AUN063N10 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 5.5m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.4 to 3.4 V Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @

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aun065n10 aup065n10.pdf pdf_icon

AUN065N10,AUP065N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous Rectification, Power Management, Load Switch 2. Features Proprietary New Trench Technology Fast Recovery Body Diode Low Gate Charge Minimize Switching Loss Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 6.5 DS(on),max m Q 67 nC g,typ I 304 A D,pulse