ZXMN10A25G Todos los transistores

 

ZXMN10A25G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN10A25G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 859 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: SOT223

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ZXMN10A25G datasheet

 ..1. Size:625K  diodes
 zxmn10a25g.pdf pdf_icon

ZXMN10A25G

ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.125 @ VGS= 10V 4 100 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resist

 0.1. Size:623K  zetex
 zxmn10a25gta.pdf pdf_icon

ZXMN10A25G

ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.125 @ VGS= 10V 4 100 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resist

 5.1. Size:608K  diodes
 zxmn10a25k.pdf pdf_icon

ZXMN10A25G

ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (V) ID (A) 0.125 @ VGS= 10V 6.4 100 0.150 @ VGS= 6V 5.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistanc

 5.2. Size:187K  diodes
 zxmn10a25ktc.pdf pdf_icon

ZXMN10A25G

A Product Line of Diodes Incorporated Green ZXMN10A25K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25 C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note

MOSTRAR MÁS

Otros transistores... ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G , ZXMN10A11K , IRF9640 , ZXMN10A25K , ZXMN10B08E6 , ZXMN15A27K , ZXMN20B28K , DMG1013T , DMG1013UW , DMG1023UV , DMG2301U .

History: RU13N65R | BRI50N06 | SUD08P06-155L | AP02N60J-H | 2SK1235 | SSW90R160SFD | BRI65R380C

 

 

 

 

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