Справочник MOSFET. ZXMN10A25G

 

ZXMN10A25G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN10A25G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Cossⓘ - Выходная емкость: 859 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для ZXMN10A25G

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMN10A25G Datasheet (PDF)

 ..1. Size:625K  diodes
zxmn10a25g.pdfpdf_icon

ZXMN10A25G

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

 0.1. Size:623K  zetex
zxmn10a25gta.pdfpdf_icon

ZXMN10A25G

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

 5.1. Size:608K  diodes
zxmn10a25k.pdfpdf_icon

ZXMN10A25G

ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

 5.2. Size:187K  diodes
zxmn10a25ktc.pdfpdf_icon

ZXMN10A25G

A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note

Другие MOSFET... ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G , ZXMN10A11K , AON7403 , ZXMN10A25K , ZXMN10B08E6 , ZXMN15A27K , ZXMN20B28K , DMG1013T , DMG1013UW , DMG1023UV , DMG2301U .

History: IXFX30N110P | SI3420 | 2SK3273-01MR | ZXM61P03F | 2SK2715 | SM7A25NSU

 

 
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