All MOSFET. ZXMN10A25G Datasheet

 

ZXMN10A25G Datasheet and Replacement


   Type Designator: ZXMN10A25G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Qg ⓘ - Total Gate Charge: 9.6 nC
   Cossⓘ - Output Capacitance: 859 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT223
 

 ZXMN10A25G substitution

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ZXMN10A25G Datasheet (PDF)

 ..1. Size:625K  diodes
 zxmn10a25g.pdf pdf_icon

ZXMN10A25G

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

 0.1. Size:623K  zetex
 zxmn10a25gta.pdf pdf_icon

ZXMN10A25G

ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist

 5.1. Size:608K  diodes
 zxmn10a25k.pdf pdf_icon

ZXMN10A25G

ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

 5.2. Size:187K  diodes
 zxmn10a25ktc.pdf pdf_icon

ZXMN10A25G

A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note

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History: ZXMN10A25KTC | AON6406

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