2SK3018WT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3018WT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: SOT523

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2SK3018WT datasheet

 ..1. Size:1392K  cn cbi
 2sk3018wt.pdf pdf_icon

2SK3018WT

Plastic-Encapsulate MOSFETS SOT 523 N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits 1. GATE Easy to parallel 2. SOURCE 3. DRAIN Marking KN MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Equivalent circuit Units Symbol Parameter Value

 0.1. Size:467K  willas
 2sk3018wt1.pdf pdf_icon

2SK3018WT

FM120-M WILLAS 2SK3018WT1 THRU SOT-323 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicat

 0.2. Size:311K  lrc
 l2sk3018wt1g s-l2sk3018wt1g.pdf pdf_icon

2SK3018WT

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

 0.3. Size:97K  lrc
 l2sk3018wt1g.pdf pdf_icon

2SK3018WT

LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET L2SK3018WT1G 100 mA, 30 V 3 Features 1) Low on-resistance. 1 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. SC-70 5) Easy to parallel. We declare that the material of product compliance with RoHS requirements. N - Channel MAX

MOSTRAR MÁS

Otros transistores... MSQ60P04D, CS40N27, CS48N75A, CS55N50, CS72N12, CS75N45, CS85105A, CS95118, 5N65