ZXM62P03E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM62P03E6
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Paquete / Cubierta: SOT26
Búsqueda de reemplazo de ZXM62P03E6 MOSFET
ZXM62P03E6 Datasheet (PDF)
zxm62p03e6.pdf

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance
zxm62p03e6ta.pdf

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance
zxm62p03gta.pdf

ZXM62P03G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistance
zxm62p02e6.pdf

ZXM62P02E620V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.20 ; I =-2.3A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low o
Otros transistores... DMP2215L , DMP2225L , DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , ZXM61P02F , ZXM62P02E6 , IRF4905 , ZXM64P02X , ZXM66P02N8 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS , DMP3015LSS , DMP3020LSS .
History: HSS2301C | HAT2085T | CS4N65A4HDY | AON6794 | AP9575AGH-HF | MPVA20N65F | F5V90HVX2
History: HSS2301C | HAT2085T | CS4N65A4HDY | AON6794 | AP9575AGH-HF | MPVA20N65F | F5V90HVX2



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent