ZXM62P03E6 MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXM62P03E6
Marking Code: 2P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.625 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 1.5 A
Total Gate Charge (Qg): 10.2 nC
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm
Package: SOT26
ZXM62P03E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXM62P03E6 Datasheet (PDF)
1.1. zxm62p03e6ta.pdf 
Size:285K _upd-mosfet
ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance •
1.2. zxm62p03e6.pdf Size:281K _diodes
ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw
2.1. zxm62p03gta.pdf Size:286K _upd-mosfet
ZXM62P03G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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