Справочник MOSFET. ZXM62P03E6

 

ZXM62P03E6 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM62P03E6
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Cossⓘ - Выходная емкость: 330 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: SOT26
 

 Аналог (замена) для ZXM62P03E6

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM62P03E6 Datasheet (PDF)

 ..1. Size:281K  diodes
 zxm62p03e6.pdf pdf_icon

ZXM62P03E6

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance

 0.1. Size:285K  zetex
 zxm62p03e6ta.pdf pdf_icon

ZXM62P03E6

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance

 6.1. Size:286K  zetex
 zxm62p03gta.pdf pdf_icon

ZXM62P03E6

ZXM62P03G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistance

 7.1. Size:178K  diodes
 zxm62p02e6.pdf pdf_icon

ZXM62P03E6

ZXM62P02E620V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.20 ; I =-2.3A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low o

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DMP2215L , DMP2225L , DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , ZXM61P02F , ZXM62P02E6 , IRF4905 , ZXM64P02X , ZXM66P02N8 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS , DMP3015LSS , DMP3020LSS .

History: 2SK30ATM | 2SK3413LS | SSW65R080SFD3 | 2SK3355-Z

 

 
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