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ZXM66P02N8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM66P02N8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 2068 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO8
 

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ZXM66P02N8 PDF Specs

 ..1. Size:610K  diodes
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ZXM66P02N8

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti... See More ⇒

 7.1. Size:65K  diodes
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ZXM66P02N8

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.2. Size:64K  zetex
zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.3. Size:831K  cn vbsemi
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ZXM66P02N8

ZXM66P03N8TA www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6... See More ⇒

Otros transistores... DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , ZXM61P02F , ZXM62P02E6 , ZXM62P03E6 , ZXM64P02X , AO3401 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS , DMP3015LSS , DMP3020LSS , DMP3025LK3 , DMP3030SN .

 

 
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